TPC6006-H 2007-12-20 1 toshiba field effect transistor silicon n channel mos type (ultra -high-speed u-mosiii) TPC6006-H notebook pc applications portable equipment applications ? small footprint due to small and thin package ? high-speed switching ? small gate charge: qsw = 2.4 nc (typ.) ? low drain-source on-resistance: r ds (on) = 59 m (typ.) ? high forward transfer admittance: |y fs | = 7 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 40 v) ? enhancement mode: v th = 1.1 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 40 v drain-gate voltage (r gs = 20 k ) v dgr 40 v gate-source voltage v gss 20 v dc (note 1) i d 3.9 drain current pulse (note 1) i dp 15.6 a drain power dissipation (t = 5 s) (note 2a) p d 2.2 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 3) e as 7 mj avalanche current i ar 3.9 a repetitive avalanche energy (note 4) e ar 0.22 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/ ?derating concep t and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics circuit configuration characteristics symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 56.8 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 178.5 c/w note: (note 1), (note 2), (note 3), (not e 4) and (note 5): see the next page. this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-3t1a weight: 0.011 g (typ.) 6 4 1 2 3 5
TPC6006-H 2007-12-20 2 marking (note 5) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = 40 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 40 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 25 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.1 ? 2.3 v v gs = 4.5 v, i d = 1.9 a ? 78 100 drain-source on resistance r ds (on) v gs = 10 v, i d = 1.9 a ? 59 75 m forward transfer admittance |y fs | v ds = 10 v, i d = 1.9 a 3.5 7 ? s input capacitance c iss ? 251 ? reverse transfer capacitance c rss ? 18 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 73 ? pf rise time t r ? 4 ? turn-on time t on ? 9 ? fall time t f ? 3 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 18 ? ns v dd ? 32 v, v gs = 10 v, i d = 3.9 a ? 4.4 ? total gate charge (gate-source plus gate-drain) q g v dd ? 32 v, v gs = 5 v, i d = 3.9 a ? 2.4 ? gate-source charge 1 q gs1 ? 1.0 ? gate-drain (?miller?) charge q gd ? 0.8 ? gate switch charge q sw v dd ? 32 v, v gs = 10 v, i d = 3.9 a ? 1.3 ? nc part no. (or abbreviation code) s2f a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. pin #1 lot code (year) product-specific code r l = 10.5 v dd ? 20 v 0 v v gs 10 v 4.7 i d = 1.9 a v out
TPC6006-H 2007-12-20 3 source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit pulse drain reverse current (note 1) i drp ? ? ? 15.6 a forward voltage (diode) v dsf i dr = 3.9 a, v gs = 0 v ? ? ? 1.2 v note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 , i ar = 3.9 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: ? on lower left of the marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 unit: (mm) (b) fr-4 25.4 25.4 0.8 unit: (mm)
TPC6006-H 2007-12-20 4 10 100 1000 0.1 1 10 v gs = 4.5 v 10 0.1 1 10 0.1 10 100 1 100 25 tc = ? 55c 20 0 5 10 15 0.9 0 0.1 0.2 0.3 0.4 0.5 1.9 i d = 3.9 a 100 0 2 4 6 8 0 2 3 4 tc = ? 55c 25 1 0 2 4 6 8 10 3.2 3.6 3 v gs = 2.5 v 3.4 8 10 0 2 4 6 8 10 2.8 4 3.8 6 4 8 0 0.2 0.4 0.6 0.8 1 3 2.8 v gs = 2.5 v 3.4 3.6 10 0 1 2 3 4 5 3.8 4.5 6 3.2 forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) |y fs | ? i d drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ? ) common source ta = 25c pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test common source t a = 25c pulse test 5
TPC6006-H 2007-12-20 5 0 02 5 25 40 0 4 10 16 12 4 15 35 6 8 16 v dd = 32 v v gs v ds 10 30 20 6 2 8 14 8 16 v dd = 32v 0 0.5 1.5 2.5 ? 80 ? 40 0 40 80 160 120 1 2 10 100 1000 0.1 1 10 c iss c rss c oss 100 0.1 1 10 0 -0.4 -0.6 -0.8 -1.2 -0.2 100 3 1 v gs = 0 v 5 10 -1.0 0 50 100 ? 80 ? 40 0 40 80 160 120 ? 80 ? 40 0 40 80 160 120 v gs = 10 v 150 i d = 0.9 , 1.9, 3.9 a v gs = 4.5 v i d = 3.9 a 1.9 0.9 drain power dissipation p d (w) gate threshold voltage v th (v) ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) ambient temperature ta (c) v th ? ta ambient temperature ta (c) p d ? ta gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) common source pulse test common source ta = 25c pulse test common source v gs = 0 v f = 1 mhz ta = 25c common source v ds = 10 v i d = 1ma pulse test 0 0 0.5 1 1.5 2 2.5 40 80 120 160 (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (1) t = 5 s (2) t = 5 s (1) dc (2) dc common source i d = 3.9a ta = 25c pulse test
TPC6006-H 2007-12-20 6 0.1 1 10 100 1 10 100 v dss max 10 ms * 1 ms * 0.1 0.1 0.001 0.01 0.1 10 100 1000 1 100 1000 1 10 (1) ( 2 ) drain-source voltage v ds (v) safe operating area drain current i d (a) r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) * : single-pulse ta = 25c curves must be derated linearly with increase in temperature. i d max (pulse) * single pulse (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b)
TPC6006-H 2007-12-20 7 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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